capable of 2.5v gate drive bv dss 20v lower on-resistance r ds(on) 50m surface mount package i d 4.3a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 90 /w thermal data parameter storage temperature range total power dissipation 1.38 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.01 continuous drain current 3 , v gs @ 4.5v 3.4 pulsed drain current 1,2 10 gate-source voltage 12 continuous drain current 3 , v gs @ 4.5v 4.3 parameter rating drain-source voltage 20 AP2312GN g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is universally used for all commercial-industrial applications. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =5a - - 36 m v gs =4.5v, i d =4a - - 50 m v gs =2.5v, i d =3a - - 75 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =5v, i d =4a - 16 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 10 ua i gss gate-source leakage v gs =12v - - na q g total gate charge 2 i d =4a - 5 8 nc q gs gate-source charge v ds =16v - 1 - nc q gd gate-drain ("miller") charge v gs =4.5v - 2.3 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 11 - ns t f fall time r d =15 -2- ns c iss input capacitance v gs =0v - 360 580 pf c oss output capacitance v ds =20v - 75 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.5 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =4a, v gs =0v, - 16 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 270 /w when mounted on min. copper pad. AP2312GN 100 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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